Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes

Emission wavelength of AlGaAsGaAs multiple quantum well lasers

Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes

.............................................................................................................................. ii Acknowledgements ............................................................................................................ iii Table of

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were 400 nm. The lowest threshold current density ob...

Wide-Band and Scalable Equivalent Circuit Model for Multiple Quantum Well Laser Diodes

iii This dissertation is dedicated to my parents and my wife, Taehee. Their support and love have encouraged me on this long path. iv ACKNOWLEDGEMENTS I would like to express my appreciation to my thesis advisor, Prof. Martin Brooke, for his constant support throughout my Ph.D. experience. I also would like to thank Prof.

AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier